4H-SiC layers have been homoepitaxially grown on off-axis 4H-SiC(0001) by chimney-type vertical hot-wall CVD at 1700 degreesC. A high growth rate up to 25 mum/h was achieved with a specular surface. The lowest net donor concentration was 5 x 10(12) cm(-3). The formation of L-1 center and Z(1) center was suppressed by increasing C/Si ratio. 4H-SiC epitaxial layers have also been grown on 4H-SiC(03 (3) over bar8). The lowest donor concentration of (03 (3) over bar8) epilayer was 4 x 10(14) cm(-3). Pin diodes were fabricated using an off-axis (0001) epilayer and a (03 (3) over bar8) epilayer by ion implantation. The diodes exhibited a high breakdown voltage of 3.3 kV with an on-resistance of 40 mOmegacm(2) for off-axis (0001) and 2.5 kV with 15 mOmegacm(2) for (03 (3) over bar8).