Homoepitaxial growth of 4H-SiC by hot wall CVD was achieved using Si2Cl6+C3H8+H-2 system. At a substrate temperature of 1550degreesC, the surface morphology was different from cold wall and hot wall CVD. Though the shallow round pits increased at silicon rich condition grown by cold wall CVD, these pits increased at carbon rich condition grown by hot wall CVD. At a substrate temperature of 1650degreesC, the scratch like defects that aligned perpendicular to the off direction were observed on both <11-20> off-axis and <1-100> off-axis substrates. Furthermore, when the radiation heating from the susceptor was minimized, these defects became deeper.