Experimental results are presented for aluminium incorporation in Si-face 4H-SiC epilayers grown in a hot-wall reactor by chemical vapour deposition (CVD). Epitaxial growth was performed using silane and propane as process gases, and trimethylaluminium (TMA) as the doping source. The incorporation of aluminium has been studied in the concentration range from 3 x 10(14) cm(-3) to 2 x 10(18) cm(-3). In addition, the influence of growth rate on the carrier concentration in the epilayers is studied.