The influence of graphite susceptor purity on the residual impurity contamination in undoped 4H-SiC epitaxial film grown at higher temperature such as 1600 degreesC is investigated. The effect of degradation of SiC coating layer on the purity of the epitaxial layer is studied. SiC coating layer is degraded after only a few repetition of growth-runs. The concentrations of N, Al, B, Ti and V in the epitaxial layer have been found to increase with the deterioration of SiC coating layer. Therefore, serious consideration on the effect of contamination from the graphite susceptor is required.