Delta-doped layers of SiC have been investigated using our original "Pulse Doping" technique during epitaxial growth in the vertical hot wall type CVD system. The dopant gases are intermittently introduced without mass flow controller and managed utilizing the pulse valve, which can open and close within <10mus. The delta-doped layers were successfully grown using "Pulse Doping" technique during continuous epitaxial growth. The doped layers had drastic increase and decrease of net donor concentration, and full-width at half-maximum of these profiles was less than 10nm. Furthermore, the stratified structures of the delta-doped layers were successively constructed in the SiC epitaxial films. These results indicated that the technique led novel SiC devices based on the delta-doped layered structures.