The first experimental survey of a novel liquid phase epitaxial growth of 6H-SiC(0001) over 2000degreesC employing a new sandwich configuration is reported. A 20 mum-thick self-confined-Si-solvent layer is naturally formed between a polycrystalline SiC source platelet and a seed 6H-SiC(0001) substrate by the self-penetration of Si liquid. A single crystalline 6H-SiC of 300mum thick terminated with atomically flat surface was epitaxially grown on the seed substrate by a 30 min annealing at 2300degreesC with no temperature gradient. The growth dynamics is governed by the difference in surface energy between the polycrystal and the single crystal.