Reproducible carbonized layers on (100) Si substrate, which were Si surfaces covered with 3C-SiC single crystal, were obtained by means of the two steps heating-up of the Si substrate. After Si surfaces have been covered with 3C-SiC single-crystalline layer, amorphous carbon thin film and graphite were formed on the 3C-SiC single crystal for long carbonization time. The obtained carbonized layers on the Si substrate were measured by ellipsometer and were evaluated by the multi-layer model with interface layers between each layer.