The electrical proper-ties of the n-3C-SiC/p-Si heterojunction grown by solid source molecular beam epitaxy on carbonized in hydrogen rich and poor atmospheres leading to silicon and carbon face silicon carbide are investigated. It was found that electrical properties of the heterojunction formed in hydrogen poor atmosphere shown the better electrical performance. If germanium is added into the interface the electrical properties of the heterojunction formed under hydrogen rich conditions can be improved.