Growth of alpha-SiC crystalline films has been investigated by pulsed laser ablation-deposition using the 4(th) harmonic of the Nd:YAG laser and 6H alpha-SiC targets. It was found that (0001) oriented films of 6H alpha-SiC can be grown hetero-epitaxially at similar to1200 degreesC on sapphire (0001) and Si(I 11) substrate planes, which have the same C-6 symmetry as alpha-SiC. These results provide not only preparation techniques for alpha-SiC epitaxial films as wafers but also may offer an alternative SiC device processing at low temperatures.