The characteristics of the defects in p-type 4H- and 6H-SiC single crystals irradiated with electrons and neutrons have been investigated by electron spin resonance measurement during annealing up to 1,500degreesC. Ten defects, which were labeled as the K1, K2, K3, K4, K5, K6, K11, K12, K13 and K14 centers introduced by irradiation, were observed at liquid nitrogen temperature and room temperature. From the annealing behaviors of these centers, it was tentatively assigned that the K12 center was identified to the complex defect related with the carbon vacancy as well as the K13 and K14 centers the silicon vacancy.