Materials Science Forum, Vol.389-3, 589-592, 2002
Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor
Eight intrinsic exciton spectra with band gaps ranging from 3.03 to 2.672 eV are found due to embedded in 4H SiC homoepitaxial films grown in hot-wall reactors. A correlation is found between the appearance of these embedded spectra and reduced lifetime as well as electron microscopic evidence for stacking faults.