Scanning Capacitance Microscopy has been applied to determine quantitative measurements on carrier profiling in SiC. The direct inversion method has been used in order to perform the conversion of the SCM raw data to carrier concentration profiles. The method takes advantage on an extended database of capacitance-to-voltage curves calculated by solving the Poisson equation for the metal-insulator-semiconductor system. The method has been employed to obtain carrier profiles on Al and N implanted samples. The carrier concentration profiles have been compared with results obtained by transmission electron microscopy to correlate the dopant activation with the defect presence.