Macro- and micro-regional electric characteristics of 3C-SiC layers grown on undulated Si substrates have been measured to investigate the applicability to a power device material. It has been found that there were extremely small regions exhibiting strong conductivity and that ideal Schottky characteristics were not obtained although a Schottky structure was fabricated. Those regions corresponded to some parts of twin boundaries (TBs) or the locations with a large layer thickness difference.