p-3C-SiC/n-6H-SiC heterojunctions: Structural and electrical

Lebedev AA; Strel'chuk AM; Davydov DV; Savkina NS; Tregubova AS; Kuznetsov AN; Soloviev VA; Poletaev NK

Materials Science Forum, Vol.389-3, 683-686, 2002

Lebedev AA, Strel'chuk AM, Davydov DV, Savkina NS, Tregubova AS, Kuznetsov AN, Soloviev VA, Poletaev NK

Sublimation epitaxy in a vacuum (SEV) has been used to obtain p-3C-SiC/n-6H-SiC heteroepitaxial structures. Results of a study of epilayers and diode structures on their base are presented. Band discontinuities are determined and a band diagram of the p-3C-SiC/n-6H-SiC heterostructure is constructed.

Keywords:band diagram;exciton;heteropolytype structures;SiC;sublimation epitaxy