The surfaces of transition metal (Ti, Ni) films deposited on SiC and Si(100) substrates were imaged by photoemission electron microscopy (PEEM) utilizing either high-pressure Hg lamp or synchrotron radiation(SR) as light sources for photoemission. The images were taken after in-situ thermal treatment on the samples in UHV conditions. Formation of structures as well agglometations were observed on Ti(40nm)/Si(100) samples annealed at similar to700degreesC. The surface of Ti(50nm)/4H-SiC sample was stable up to similar to850degreesC, where formations of structures were observed. For the Ti(10nm)/3C-SiC/Si sample annealed to similar to800degreesC, island structures (in-ring clusters) were formed. Although the surface of Ni (4nm) film on 3C-SiC remains stable up to 650degreesC, diffusions of Ni films on the edge of the films were observed. Interestingly, an abrupt contrast reversal was observed at similar to240degreesC for Ni/3C-SiC sample.