The annealing kinetics of the implantation-induced amorphous layer on (0001)-oriented 6H-SiC has been investigated at annealing temperatures below 1000 degreesC using transmission electron microscopy. The surface region of sample is amorphized by the 100 keV and 300 keV-Ar+ implantation at a dose of 2 X 10(15) and 4 X 10(15) cm(-2), respectively. The annealing of the amorphous layer leads to the regrowth of the twinned-micro 3C-SiC crystals with a regrowth rate of 0.044 nm/min at 770 degreesC and, subsequently, highly oriented 3C-SiC crystals with a faster regrowth rate of 0.35 nm/min. The change of the regrowth mechanism in the regrowth of the implantation-induced amorphous layer to 3C-SiC is suggested.