The electrical properties and surface morphology of CoAl Ohmic contacts with modulation structure for p-type 4H-SiC were investigated. The CoAl contacts showed Ohmic characteristic, after annealing at a temperature as low as 800degreesC, and the specific contact resistivity as low as 4x10(-4) Ohm-cm(2) was obtained after annealing at 900degreesC. The surface morphology of the CoAl contacts was significantly improved compared with conventionally used TiAl Ohmic contacts even after annealing at 1000degreesC.