This paper investigates the static and dynamic performance of 4H SiC pn, pinch and Schottky diodes able to block 3 kV, with identical active area (1.0 mm(2)) and prepared on the same wafer. In reverse direction the Schottky barrier diodes (SBD) exhibit the highest leakage current, the pn diodes the lowest. Leakage of the pinch diodes is lower than that of SBDs since the highly doped p regions reduce the field strength at the Schottky contact. Considering reverse and forward characteristics the pinch diode turns out to be the best choice. The active p(+) emitters of the pinch diode improve its surge current stability significantly. The dynamic behavior is Schottky like and characterized by a negligible storage charge and a recovery time of 30 ns.