Ti/4H-SiC Schottky barrier diode without any intentional edge termination, with low on-resistance of 3 mOmegacm(2), low leakage current of 10(-5) A/cm(2) at 1000 V, and relatively high breakdown voltage of 1500 V, is fabricated. The obtained breakdown voltage is explained by minimization of electric field enhancement at the Schottky electrode edge due to the thin surface pinning layer. The relation between obtained breakdown voltage, Schottky barrier height, and thin surface layer is clarified.