4H-SiC accumulation epilayer channel MOSFETs were fabricated using multiple epilayer growth and RIE. Specific on-resistance of 107 mOmegacm(2) and breakdown voltage of 1072 V were obtained for the MOSFET with the gate length of 5 mum and the total gate width of 5.6 mm. Leakage current through the accumulation MOS channel was well suppressed in the range < 2 nA (below the detection limit). This indicates superior quality of the epilayer MOS channel.