In this paper, a novel planar high-voltage normally-off 4H-SiC field gate bipolar transistor (FGBT) is proposed. This transistor is free. of gate oxide/insulator and expected to be suitable for high temperature applications. Its static and dynamic characteristics at 300K and 600K are investigated by performing two-dimensional numerical simulations. It can be turned on with a gate voltage of 2.7V and 2.0V at 300K and 600K respectively. With a 28mum blocking layer and a horizontal channel opening of 0.15mum, this bipolar transistor is able to block over 3000V with a leakage current density smaller than 1 x 10(-3) A/cm(2) at both 300K and 600K, and achieves a forward current density at 5V of 100 A/cm(2) and 134 A/cm(2) at 300K and 600K respectively. With a dV(G)/dt of 5.4 x 10(7)V/s, the turn-on time is 0.27mus and the turn-off time 1.41mus at 300K. The turn-on time decreases slightly to 0.21mus and the turn-off time increases to 2.05mus at 600K.