Materials Science Forum, Vol.389-3, 1359-1362, 2002
Demonstration of IMPATT diode oscillators in 4H-SiC
IMPATT diodes have been fabricated and characterized in 4H-SiC. Diodes utilizing a high-low doping profile are developed for both X-band and Ka-band operation. Sustainable avalanche breakdown is obtained, and microwave operation is characterized at X-band.