Aluminum nitride is expected using substrates for high frequency, high power and high temperature devices. Additionally, aluminum nitride can be used as substrates for 2H-silicon carbide. In this study, heteroepitaxial growth of aluminum nitride on silicon carbide was carried out by the sublimation close space technique. In order to grow aluminum nitride. aluminum nitride powder and aluminum carbide powder were used as the source material and the graphite crucible was used. Crystal growth was carried out in nitrogen ambient at the pressure of 1.0x10(5) Pa and at 0.4 Pa. It was confirmed by the Raman scattering that the grown layers were 2H-aluminum nitride. In order to obtain high crystal quality layers, a low growth rate and an enough thickness are necessary.