화학공학소재연구정보센터
Materials Science Forum, Vol.404-7, 141-146, 2002
Finite element simulation of residual stresses in epitaxial layers
A nonlinear finite element approach presented here is based on the constitutive equations for anisotropic hyperelastic materials. By digital image processing the elastic incompatibilities (lattice mismatch) are extracted from the HRTEM image of GaN epilayer. Such obtained tensorial field of dislocation distribution is used next as the input data to the FE code. This approach is developed to study the stress distribution associated with lattice defects in highly mismatched heterostructures applied as buffer layers for the optically active structures.