Due to the decrease of IC chip size, the development of fine diameter copper bonding wires attaches chip to lead frame is on increasing trend. To get high-strength fine pitch copper bonding wires, optimization of wire drawn procedure and optimized recrystallization annealing method are investigated. The microstructure and microtexture of bonding wires are analyzed by using Electron Back Scattered Diffraction(EBSD) and the relations between initial diameter of ingot and microtexture are revealed. Typical drawing and final annealing of copper bonding wires gives minor <111> and major <100> texture at 350degreesC and 450degreesC. Intermediate annealing before final diameter makes major <111> and minor <100> component with optimum grain size.