Effect of grain boundary character on the selective growth of Goss grain during secondary recrystallization has been investigated. Grain growth behavior of secondary recrystallized Goss grain was observed in situ by synchrotron x-ray topography and orientation relationship between the Goss grain and the preferentially consumed grains in the primary matrix was analyzed by EBSP technique. Grain growth of Goss grain is classified into two regions; (1) inhomogeneous and sluggish grain growth in the lower transition temperature region and (2) uniform and stationary grain growth in the higher temperature region. Goss grain grows preferentially into the matrix grains with near-Sigma9 boundaries (within the twice of misorientation angle due to the Brandon's criterion) in the lower transition temperature region, where most of the general boundaries are stagnated, which leads to inhomogeneous and sluggish grain growth. As annealing temperature rises, the inhibitor intensity decreases and pinning of general boundaries gradually fade out, which leads to uniform and stationary grain growth. Goss grain is frequently bounded by near-Sigma9 boundaries and thus grows selectively in the lower transition temperature region.