We report on a new method of free-spreading SiC bulk crystal growth by sublimation, where the crystal is kept out of touch with the crucible side wall and SiC polycrystalline deposits. The free-spreading SiC tends to form a crystal of pronounced hexagonal shape during the growth. The 6H- and 4H-SiC crystals up to 35 mm in diameter with the quality comparable or better than that of the Lely crystals are obtained. The growth conditions favorable for the free-spreading crystal growth are discussed. Different efficiencies of donor (N) and acceptor (Al) incorporation are observed on singular facets.