Homoepitaxial growth and fundamental aspects of device processing on 4H-SiC(11 (2) over bar0) and (03 (3) over bar8) have been reviewed. Although the efficiency of nitrogen incorporation is higher on the nonstandard faces than on (0001), a low background doping concentration of 2similar to3x10(14) cm(-3) can be achieved. On these faces, boron atoms are less effectively incorporated, compared to the growth on off-axis (000 1). 4H-SiC(11 (2) over bar0) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC(03 (3) over bar8) epitaxial growth. Owing to the superior lattice recovery during post-implantation annealing and to the superior quality of MOS interface, both 4H-SiC(11 (2) over bar0) and (03 (3) over bar8) possess much potential to develop SiC power MOSFETs.