4H-SiC epilayers have been achieved by cold wall CVD in the silane-propane system between 1450degreesC and 1600degreesC. The layers have been characterized by AFM, Raman spectroscopy, low temperature photoluminescence (LTPL) and CV measurements. The layers are mirror-like and present a low density of sharp triangular defects. The average defect density is 10(4) per cm(2). A growth rate of 6mum.h(-1) is obtained at 1600degreesC. A residual doping level of 4.10(14) cm(-3) is obtained for a C/Si ratio of ten. When the C/Si ratio is further increased (>18), a degradation of the layer morphology is observed.