A pendeo epitaxial growth approach has been developed in order to reduce the high density of interfacial defects. Pendeo epitaxy of 3C-SiC grown on the seed 3C-SiC previously deposited on patterned Si substrates was achieved via CVD using hexamethyldisilane (HMDS). The air-gap was observed under the free-standing lateral epitaxial overgrowth of 3C-SiC. Regrowth to form pendeo epitaxy was demonstrated at 1350 degreesCsimilar to. Remarkable parameters regarding pendeo epitaxy are the H-2 carrier flow rate on the regrowth and the growth temperature on the formation of the seed 3C-SiC. The smooth surface morphology is observed on both the seed regions and the LEO regions at the growth temperature of 1350 degreesC. Scanning electron microscopies revealed coalescence of the laterally growing for pendeo epitaxial growth of 3C-SiC.