Materials Science Forum, Vol.433-4, 305-308, 2002
Identification of dumb-bell shaped interstitials in electron irradiated 6H SiC by photoluminescence spectroscopy
Near displacement-threshold irradiation of 6H-SiC has been performed and the damage created studied by low temperature photoluminescence microscopy. Optical centres are created which have properties consistent with C-C and C-Si dumb-bells.