In this work, a method to obtain the Shockley-Read-Hall (SRH) minority carrier lifetime from the room temperature photoluminescence intensity is proposed. Indeed, taking into account the different recombination mechanisms, we calculate the photoluminescence (PL) intensity as a function of carrier lifetime. The PL map can then be converted in lifetime map. An example for a 4H-SiC epitaxy is given. The obtained values ranging from 20 ns to 150 ns are in good agreement with typical values reported in the literature.