The parameters of electron-hole scattering (EHS) in 4H-SiC are estimated by analyzing pulsed isothermal current-voltage characteristics of 6-kV 4H-SiC diodes over a wide range of current densities (1 - 10(4) A/cm(2)) and external temperatures (293 - 553 K). The efficiency of EHS in 4H-SiC is approximately two times higher that in Si and 60 times that in GaAs. The EHS makes very essential contribution to voltage drop across 4H-SiC bipolar devices at high forward current densities.