Electrical characterization of Ni/porous SiC/n-SiC structure

Grekov A; Soloviev S; Das T; Sudarshan TS

Materials Science Forum, Vol.433-4, 419-422, 2002

Grekov A, Soloviev S, Das T, Sudarshan TS

A porous SiC layer was formed on a n-4H-SiC substrate by electrochemical etching. The morphology of the porous layer was investigated by SEM. Nickel Schottky contacts were fabricated on the porous SiC substrates. Forward and reverse current-voltage characteristics of such structures is presented and discussed.

Keywords:I-V characteristics;nickel contacts;porous SiC;SEM;surface morphology