In order to construct a reliable parameter set for the physical modeling of 4H-SiC, we are collecting and examining the physical parameters. The results of mobility measurement are presented and compared with the built-in model in the device simulator. The doping dependence of the electron mobility is in agreement with the built-in model, whereas that of the hole mobility is different from the built-in model in the higher doping region. Further, the anisotropy of the electron and hole mobility is investigated. The anisotropy of the electron mobility mu(<1 (1) over bar 00>)/ mu(<0001>) is about 0.83 and is in agreement with the built-in model. The anisotropy of the hole mobility is observed and it is estimated to be 1.15. To our knowledge, this is the first report of the anisotropy of the hole mobility in 4H-SiC.