In this paper we present results on the electrical properties of undoped and in-situ doped SixC1-x films grown by PECVD at 400degreesC in SiH4+CH4 mixtures and using PH3 or B2H6 as doping gases. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of SixC1-x films are measured on Al/SixC1-x/Al and Al/SixC1-x/Si/Al capacitors with a top contact area of 64x 10(-4)cm(2). At higher electric field, it is found that the Frenkel-Poole effect is more likely to be the conduction mechanism for Si rich, while the Schottky effect for C rich a-SixC1-x films. For the p-type doped SixC1-x films, Frenkel-Poole effect is the only conduction mechanism. For the n-type doped SixC1-x films, the behavior is not clear. A sensible increase in dielectric constant is observed for C rich films while a moderate variation is seen for Si rich films when the Si/C ratio increases. Using the conductance method, the interface trapped density (D-it) is calculated. Flatband voltage (V-FB) and threshold voltage (V-T) are determined as well.