In electron irradiated Vanadium doped semi-insulating 6H-SiC with a Fermi level position at Ec-1.2eV we observe by EPR the carbon vacancy V-C(+), the carbon di-interstitial (C-C)c and the Ky3/EI6 (Si-C(+)) defects under thermal equilibrium conditions. The observation of the Ky3/EI6 spectrum is not compatible with its present assignment to the Si-C(+) and supports its previously suggested attribution to V-C(+) on a hexagonal site. We observe in addition a new S=1/2 center (Pa1) with C-3v symmetry and resolved hyperfine interaction with (1+2) Si atoms.