500 keV nitrogen implantation at different tilt angles with respect to the c-axis of 6H-SiC was carried out. The tilt angles of irradiation were chosen after 500 keV N+ angular scan measurement. The radiation damage distribution of both Si and C sublattice have been investigated by Backscattering Spectrometry combined with channeling technique (BS/C) using 3550 keV He-4(+) ion beam. It has been shown that the radiation damage was reduced significantly by means of channeling implantation. The damage peak in this case locates about 25% deeper compared to that of the random irradiation. Some aspects of the channeling process correlating with damage buildup in the Si and C sublattices are discussed.