We report on the structural and electrical properties of four different 6H-SiC samples implanted to a final concentration Of 8x10(19) cm(-3). The implantation was done at room temperature using either N+ or P+ or (W+ + P+) co-doping. In all three cases, from micro-Raman experiments, we demonstrate a good lattice recovery. From transport experiments, we find about 75% activation of the implanted species and reasonable agreement with previously published data.