We fabricated 4H-SiC vertical MOSFETs with contacts to the source, p-well and polycrystalline silicon (polysilicon) gate and these were simultaneously formed from a single material, using one deposition and a single contact annealing process. Typical specific contact resistances of 4.8x10(-5) Omegacm(2) for the n(+) source region, 1.5x10(-6) Omegacm(2) for the gate polysilicon and 5.2 x 10(4) Omegacm(2) for the p-well contact region were obtained using Al/Ni (Al-6%) as the contact metal. Also, the static characteristics of the vertical MOSFETs indicated that the MOS interface can withstand an even higher temperature process such as that used in ohmic-contact formation.