This paper presents the static characteristics of 4H-SiC lateral RESURF MOSFET with a buried channel structure. The MOSFET channel mobility was obtained to be as high as 80-90cm(2)/Vs, resulting in the low channel resistance. The RESURF MOSFET exhibited an on-resistance of 71mOmegacm(2) and a breakdown voltage of 730V. A figure-of-merit (V-bd(2)/R-on) of this device was calculated to be 7.5MW/cm(2).