The success of high voltage SiC switching devices is currently retarded by not solved questions regarding the technology of bipolar devices and the available material quality which does not allow the fabrication of large area chips. High currents, however, are mandatory for most of the targeted application in energy distribution or traction. Thus, a unipolar high voltage switch based on a serial connection of vertical JFETs is presented. This concept comprises the advantage of paralleling in order to achieve high currents and the fast switching behavior of majority carrier devices. It is controlled by a simple silicon low voltage power transistor at low side (source connected to ground). Theoretically a 12kV device with less than 10 resistance for fast switching above 10kHz can be realized using existing RV SiC VJFETs. First results for a 4.5kV configuration with an on-resistance of 1.20 are presented. The transient analysis reveals the ability to switch extremely fast. The devices are placed in an appropriate package designed for applications up to 9kV. Switches utilizing the full capability of the package will be realized in a next step.