The 3.3kV unipolar and 10 kV bipolar integral cascode switches, built upon the principle of a buried grid and a low voltage control MOSFET [1], are compared to the plain 3.3kV UMOSFET and BGJFET and 10kV TIGBT (Trench IGBT) and BGJFETh (Buried Grid Junction Field Effect Transistor (T) or Thyristor (Th)), in order to analyse and demonstrate advantages of the cascode concept.