1 kV 4H-SiC JBS rectifiers were fabricated using AlN capped anneal and compared with those annealed conventionally in a furnace. The surface damage during the high temperature activation anneal is significantly reduced using AlN capped anneal. The forward drop of the JBS rectifiers is <2.5 V while the leakage current is about 2 orders of magnitude lower than that of the Schottky rectifier. The blocking voltage >1 kV was achieved.