Based on numerical simulations we fabricated thyristors on SiC with respect to different pulsed power applications. In order to achieve high breakover voltages we developed and investigated various types of terminations (MESA, EGR, JTE). Thyristors, terminated by epitaxial guard rings (EGR), showed breakover voltage of up to about 1900 V. By dynamic electrical characterisations of the devices a reliable turn-on and turn-off could be demonstrated.