The advantages of using Silicon Carbide for X-ray spectroscopy and imaging has been examined over the existing semiconductor detectors. Several SiC detectors have been manufactured and tested. They are constituted by Schottky junctions on a low doped (5x10(14)) n-4H-SiC epitaxial layer. The diodes show extremely low reverse current densities at room temperature (less than or equal to 5 pA/cm(2)) up to mean electric field of 100 kV/cm in the depleted region. These currents are two order of magnitude lower with respect to the best junctions on Silicon used for X-ray spectroscopy, so making SiC detectors extremely low noise devices. Using, a pixel detector a noise of 415 eV FWHM at room temperature has been measured. Moreover for the first time an X-ray spectroscopy at high temperature has been demonstrated using a semiconductor: the SiC detector has been operated at 100degreesC, showing a noise of 1 keV FWHM.