Positron reemission properties of SiC were studied. Promising electric field assisted reemission results were observed with one sample. Without an applied field the diffusion length is 246+/-2 nm with y(o) = 21+/-0.5% reemission at 1 keV incident energy. The reemission fraction increased to as much as 42.3+/-0.6% and 14.4+/-0.5% for incident positrons of I and 20 keV respectively after the application of an electric field. A field-assisted diffusion length of 1.91+/-0.14 mum and a branching ratio of y(o)=28.8+/-0.1% were extracted. These values lead to a reflection-mode moderator efficiency comparable to that of tungsten single crystal.