The quest of driving SiC toward the realization of its full potential as a semiconductor material continues in many organizations world-wide. R&D and manufacturing efforts continue to address issues of scale-up of wafer size, improvements in wafer shape and surface characteristics, reduction of background impurities in bulk crystals, controlled uniformity of electrical properties, and reduction and control of crystalline defects. Significant progress has been made in several key areas. Increased manufacturing activity in the production of 3-inch diameter crystals has led to substrates with micropipes densities <30 cm(-2) in n-type and <80 cm(-2) in semi-insulating material, and R&D demonstrations of substrates exhibiting micropipe densities <0.5 cm(-2) in n-type and <5 cm(-2) in semi-insulating wafers. Developmental 100-mm diameter substrates exhibiting micropipe densities <60 cm(-2) in both n-type and semi-insulating materials have now been demonstrated. Significant improvement in bulk crystal purity has been achieved with reduction of impurity concentrations below 5 x 10(15) cm(-3).