4H-SiC crystals of cylindrical shape 25 mm and 45 mm in diameter have been grown by the Modified Lely method in a graphite crucible with a guide. The crystals had not mechanical contacts with the walls of the crucible and no formation of polycrystalline SiC during the growth to decrease the stresses. This was confirmed by the facets observed at the edges of the crystals. Numerical simulations of the growth process have been performed.