In CF-PVT process, SiC feeding by CVD and sublimation are obtained simultaneously in the crucible. The transfer of silicon carbide from the deposition to the sublimation areas occurs through out highly porous graphite foam. EDS mapping, X-ray diffraction and the combination of a simplified thermodynamic model with simulations demonstrated that this transfer results from successive steps of deposition, sublimation and condensation of silicon carbide inside the porous medium at temperatures above 2073K.